View VN03012Y_5907128.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

vn03 iso high side smart power solid state relay preliminary data september 1994 block diagram type v dss r ds(on) i n (*) v cc vn03 60 v 0.5 w 0.7 a 26 v pentawatt (vertical) (*) in= nominal current according to iso definition for high side automotive switch (see note 1) (#) the maximum continuous output current is the current at t c = 85 o c for a battery voltage of 13 v which does not activate self protection n maximum continuous output current (#): 4 a @ t c = 85 o c n 5v logic level compatible input n thermal shut-down n under voltage protection n open drain diagnostic output n inductive load fast demagnetization n very low stand-by power dissipation description the vn03 is a monolithic device made using sgs-thomson vertical intelligent power technology, intended for driving resistive or inductive loads with one side grounded. built-in thermal shut-down protects the chip from over temperature and short circuit. the open drain diagnostic output indicates: open load in off state and in on state, output shorted to v cc and overtemperature. fast demagnetization of inductive loads is archieved by negative (-18v) load voltage at turn-off. pentawatt (horizontal) pentawatt (in-line) order codes: pentawatt vertical vn03 pentawatt horizontal vn03 (011y) pentawatt in-line vn03 (012y) 1/11
absolute maximum rating symbol parameter value unit v (br)dss drain-source breakdown voltage 60 v i out output current (cont.) at t c = 85 o c4a i r reverse output current at t c = 85 o c-4a i in input current 10 ma -v cc reverse supply voltage -4 v i stat status current 10 ma v esd electrostatic discharge (1.5 k w , 100 pf) 2000 v p tot power dissipation at t c = 85 o c 14 w t j junction operating temperature -40 to 150 o c t stg storage temperature -55 to 150 o c connection diagram current and voltage conventions vn03 2/11
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 4.5 60 o c/w o c/w electrical characteristics (v cc = 13 v; -40 t j 125 o c unless otherwise specified) power symbol parameter test conditions min. typ. max. unit v cc supply voltage 5.5 13 26 v in(*) nominal current t c = 85 o c v ds(on) 0.5 (note 1) 0.7 a r on on state resistance i out = 0.7 a i out = 0.7 a t j = 25 o c 1 0.5 w w i s supply current off state t j 3 25 o c on state 50 15 m a ma v ds(max) maximum voltage drop i out = 4 a t c = 85 o c3.6v switching symbol parameter test conditions min. typ. max. unit t d(on) (^) turn-on delay time of output current i out = 0.7 a resistive load input rise time < 0.1 m s 15 m s t r (^) rise time of output current i out = 0.7 a resistive load input rise time < 0.1 m s 10 m s t d(off) (^) turn-off delay time of output current i out = 0.7 a resistive load input rise time < 0.1 m s 15 m s t f (^) fall time of output current i out = 0.7 a resistive load input rise time < 0.1 m s 4 m s (di/dt) on turn-on current slope i out = 0.7 a i out = i ov 0.05 0.5 1 a/ m s a/ m s (di/dt) off turn-off current slope i out = 0.7 a i out = i ov 0.14 3 3 a/ m s a/ m s v demag inductive load clamp voltage i out = 0.7 a l = 1 mh -24 -18 -14 v logic input symbol parameter test conditions min. typ. max. unit v il input low level voltage 0.8 v v ih input high level voltage 2( )v v i(hyst.) input hysteresis voltage 0.5 v i in input current v in = 5 v v in = 2 v v in = 0.8 v 25 250 500 250 m a m a m a v icl input clamp voltage i in = 10 ma i in = -10 ma 5.5 6 -0.7 -0.3 v v vn03 3/11
electrical characteristics (continued) protection and diagnostics (continued) symbol parameter test conditions min. typ. max. unit v stat status voltage output low i stat = 1.6 ma 0.4 v v usd under voltage shut down 5v v scl status clamp voltage i stat = 10 ma i stat = -10 ma 6 -0.7 v v i ov over current r load < 10 m w -40 t c 125 o c28a i av average current in short circuit r load < 10 m w t c = 85 o c0.9a i ol open load current level 53570ma t tsd thermal shut-down temperature 140 o c t r reset temperature 125 o c v ol open load voltage level off-state (note 2) 2.5 3.75 5 v t 1(on) open load filtering time (note 3) 1 5 10 ms t 1(off) open load filtering time (note 3) 1 5 10 ms t 2(off) open load filtering time (note 3) 1 5 10 ms t povl status delay (note 3) 5 10 m s t pol status delay (note 3) 50 700 m s (^) see switchig time waveforms ( ) the v ih is internally clamped at 6v about. it is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 ma at the input pin. note 1: the nominal current is the current at t c = 85 o c for battery voltage of 13v which produces a voltage drop of 0.5 v note 2: i ol(off) = (v cc -v ol )/r ol (see figure) note 3: t 1(on) : minimum open load duration which acctivates the status output t 1(off) : minimum load recovery time which desactivates the status output t 2(off) : minimum on time after thermal shut down which desactivates status output t povl t pol : iso definition (see figure) note 2 relevant figure note 3 relevant figure vn03 4/11
functional description the device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to v cc and overtemperature. the truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. the output signals are processed by internal logic. the open load diagnostic output has a 5 ms filtering. the filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. this means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. no delay occur for the status to go low in case of overtemperature conditions. from the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (t povl )in case of overtemperature condition and a delay (t pol ) in case of open load. these feature fully comply with international standard office (i.s.o.) requirement for automotive high side driver. to protect the device against short circuit and over current conditions, the thermal protection turns the integrated power mos off at a minimum junction temperature of 140 o c. when the temperature returns to 125 o c the switch is automatically turned on again. in short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. driving inductive loads, an internal function of the device ensures the fast demagnetization with a typical voltage (v demag ) of -18v. this function allows to greatly reduce the power dissipation according to the formula: p dem = 0.5 l load (i load ) 2 [(v cc +v demag )/v demag ] f where f = switching frequency and v demag = demagnetization voltage based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. the maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed v cc , v demag and f. protecting the device agaist load dump - test pulse 5 the device is able to withstand the test pulse no. 5 at level ii (v s = 46.5v) according to the iso t/r 7637/1 without any external component. this means that all functions of the device are performed as designed after exposure to disturbance at level ii. the vn03 is able to withstand the test pulse no.5 at level iii adding an external resistor of 150 ohm between pin 1 and ground plus a filter capacitor of 1000 m f between pin 3 and ground (if r load 20 w ). protecting the device against reverse battery the simplest way to protect the device against a continuous reverse battery voltage (-26v) is to insert a schottky diode between pin 1(gnd) and ground, as shown in the typical application circuit (fig.3). the consequences of the voltage drop across this diode are as follows: C if the input is pulled to power gnd, a negative voltage of -v f is seen by the device. (vil, vih thresholds and vstat are increased by vf with respect to power gnd). C the undervoltage shutdown level is increa- sed by vf. if there is no need for the control unit to handle external analog signals referred to the power gnd, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal gnd for the whole control board avoiding shift of v ih , v il and v stat . this solution allows the use of a standard diode. switching time waveforms vn03 5/11
truth table input output diagnostic normal operation l h l h h h open circuit (no load) h h l over-temperature h l l under-voltage x l h short load to v cc lhl figure 1: waveforms figure 2: over current test circuit vn03 6/11
figure 3: typical application circuit with a schottky diode for reverse supply protection figure 4: typical application circuit with separate signal ground vn03 7/11
dim. mm inch min. typ. max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.8 1.05 0.031 0.041 f1 1 1.4 0.039 0.055 g 3.2 3.4 3.6 0.126 0.134 0.142 g1 6.6 6.8 7 0.260 0.268 0.276 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l 17.85 0.703 l1 15.75 0.620 l2 21.4 0.843 l3 22.5 0.886 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 m 4.5 0.177 m1 4 0.157 dia 3.65 3.85 0.144 0.152 l2 l3 l5 l7 l6 dia. a c d e d1 h3 h2 f g g1 l1 l mm1 f1 p010e pentawatt (vertical) mechanical data vn03 8/11
dim. mm inch min. typ. max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.8 1.05 0.031 0.041 f1 1 1.4 0.039 0.055 g 3.2 3.4 3.6 0.126 0.134 0.142 g1 6.6 6.8 7 0.260 0.268 0.276 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l 14.2 15 0.559 0.590 l1 5.7 6.2 0244 l2 14.6 15.2 0.598 l3 3.5 4.1 0.137 0.161 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 dia 3.65 3.85 0.144 0.152 p010f pentawatt (horizontal) mechanical data vn03 9/11
dim. mm inch min. typ. max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.8 1.05 0.031 0.041 f1 1 1.4 0.039 0.055 g 3.2 3.4 3.6 0.126 0.134 0.142 g1 6.6 6.8 7 0.260 0.268 0.276 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l2 23.05 23.4 23.8 0.907 0.921 0.937 l3 25.3 25.65 26.1 0.996 1.010 1.028 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 dia 3.65 3.85 0.144 0.152 p010d pentawatt (in- line) mechanical data vn03 10/11
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a vn03 11/11

▲Up To Search▲

Price & Availability of VN03012Y

	To Download VN03012Y Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .